Simulating Silicon Carbide (SiC) in Switching Power Topographies
Introduction
Let's now discuss using the Advanced Converter-Level Simulation Tool in selecting and analyzing power topologies. A lot of topologies are very complicated in terms of waveforms. They have multiple frequencies like switching frequencies and alternating current (AC) line frequencies. Using the simulation tool helps to understand the power dissipation. It helps to understand temperature rise and what are the optimum metal-oxide-semiconductor field-effect transistor (MOSFET) sets to use in a given project or program.
Simulation Tool Demonstration for SiC Devices
Simulation Steps
Topology
Choose among the following topologies.
AC - Direct Current (DC)
- Totem-pole Bridgeless PFC Converter (1/2/3 phases)
- Active Front End (3 phase)
- Vienna Rectifier (3 phase)
DC-DC
- Flyback Converter
- Boost Converter with Synchronized Rectification
DC-AC
- Full-bridge LLC Resonant Converter
- Phase-Shift Full-Bridge Converter
- Inverter (3 phase, 2 level, grid-connected)
- Inverter (3 phase, 2 level, RL load)
Devices
Here you choose your system voltages, and power rating. A list of appropriate devices for the system will be displayed for you to select.
Details
Here you can configure the details of the devices you selected for your configuration.
Circuit
Here you can select your circuit parameters such as:
- Grid frequency Fac
- Inductance L (per phase)
- Switching frequency Fsw
- Deadtime tdead
Cooling
Here you enter the thermal parameters such as the MOSFET grease thermal resistance.
Simulation
In the Simulation Control section, select Simulate to begin the simulation. You will see the simulator work through the simulation and when done, you will see Simulation Completed in the Simulation Control section.
Report
Finally, the report will display a summary of the devices and topology tested along with the results that will be available for printing or download.